MATERIALS SCIENCE AND TECHNOLOGY.
SEMICONDUCTORS
ArticleName
SIMULATION OF COALESCENCE OF PRIMARY
GROWTH DEFECTS IN DISLOCATION-FREE SILICON
SINGLE CRYSTALS
ArticleAuthors
V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L.
Maksimchuk,
ArticleAuthorsData
V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L.
Maksimchuk, Classical Private University, Ukraine
Abstract
An analytical expression of primary growth defect
size distribution function has been obtained. We have
shown that the coalescence stage of primary growth
defects is not a time-limited process and occurs concurrently
with defect formation.
keywords
Microdefects, silicon single crystals, coalescence,
kinetics, precipitation.
Language of full-text
russian
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