MATERIALS SCIENCE AND TECHNOLOGY.
SEMICONDUCTORS
Название
SIMULATION OF COALESCENCE OF PRIMARY
GROWTH DEFECTS IN DISLOCATION-FREE SILICON
SINGLE CRYSTALS
Авторы
V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L.
Maksimchuk,
Информация об авторах
V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L.
Maksimchuk, Classical Private University, Ukraine
Реферат
An analytical expression of primary growth defect
size distribution function has been obtained. We have
shown that the coalescence stage of primary growth
defects is not a time-limited process and occurs concurrently
with defect formation.
Ключевые слова
Microdefects, silicon single crystals, coalescence,
kinetics, precipitation.
Language of full-text
русский
Полный текст статьи