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Materialy Elektronnoi Tekhniki




MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название SIMULATION OF COALESCENCE OF PRIMARY GROWTH DEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS
Авторы V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk,
Информация об авторах V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, Classical Private University, Ukraine
Название EFFECT OF REACTANT INTRODUCTION PARAMETERS ON SILICON ROD TEMPERATURE IN SIEMENS PROCESS
Авторы V.A. Gavrilov, P.M. Gavrilov and P.P. Turchin
Информация об авторах V.A. Gavrilov, P.M. Gavrilov, FGUP Mining and Chemical Factory, P.P. Turchin, FGOU VPO Siberian Federal university
MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS
Название EFFECT OF GROWTH CONDITIONS ON THE OPTICAL TRANSMISSION SPECTRA AND ELECTROPHYSICAL PROPERTIES OF LANTHANUM– GALLIUM SILICATE FAMILY CRYSTALS
Авторы O.A. Buzanov, N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel
Информация об авторах O.A. Buzanov, OAO Fomos Materials; N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’)
Название PARAMETERS OF ACTIVATION PROCESSES IN DIAMOND, SILICON AND GERMANIUM
Автор M.N. Magomedov
Информация об авторе M.N. Magomedov, Institute for Geothermal Problems, Dagestan Research Center, Russian Academy of Sciences
MODELING OF PROCESSES AND MATERIALS
Название CHOICE OF REACTOR CHAMBER FOR POLYCRYSTALLINE SILICON GROWTH
Авторы D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky
Информация об авторах D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky, Soft–Impact Ltd, Saint–Petersburg State Polytechnical University
Название SIMULATION OF AMORPHOUS AND CRYSTALLINE DIAMOND–LIKE FILM FORMATION PROCESSES
Авторы B. M. Sinelnikov, V. A. Tarala
Информация об авторах B. M. Sinelnikov, V. A. Tarala, North–Caucasus State Technical University, South Scientific Center of the Russian Academy of Sciences, laboratory of Nanochemistry and Nanotechnology
NANOMATERIALS AND NANOTECHNOLOGY
Название SURFACE STRUCTURE OF SILICON/CARBON MATRIX NANOCOMPOSITES AS REVEALED BY SCANNING PROBE MICROSCOPY
Авторы M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin
Информация об авторах M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin, Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’
Название ESTIMATING ANALYSIS OF CONDITIONS FOR DEFECT–FREE QUANTUM DOTS FORMATION IN InxGa1–xAs/GaAs HETEROSTRUCTURES
Авторы R.Kh. Akchurin, N.T. Vagapova
Информация об авторах R.Kh. Akchurin, N.T. Vagapova, Moscow State Academy of Fine Chemical Technology
PHYSICAL CHARACTERISTICS AND THEIR STUDY
Название STRUCTURAL INVESTIGATIONS OF MULTICRYSTALLINE SILICON FOR SOLAR CELLS: GRAIN SIZE MEASUREMENT PROBLEM
Автор A.V. Prykhodko
Информация об авторе A.V. Prykhodko, Zaporozhye National University
Название HEAT–SENSITIVE PROPERTIES OF PbA0,5Nb0,5O3 (A = Fe, In, Co, Mn) FERROELECTRICS
Авторы V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov
Информация об авторах V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov, M.V. Lomonosov Moscow State Academy of Fine Chemical Technology
ATOMIC STRUCTURES AND METHODS OF STRUCTURAL INVESTIGATIONS
Название EFFECT OF GROWTH CONDITIONS OF Bi2Te2,7Se0,3 SOLID SOLUTIONS ON THE ANISOTROPY OF THEIR PHYSICAL PROPERTIES
Авторы V.T. Bublik, A.I. Voronin, E.A. Bygovskaya, V.F. Ponomarev, N.Yu. Tabachkova and O.V. Toropova
Информация об авторах A.I. Voronin, V.F. Ponomarev, (Kristall Research and Production Company Ltd.); N.Yu. Tabachkova, V.T. Bublik, E.A. Bygovskaya and O.V. Toropova, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’)
Название FABRICATION OF SINGLE–CRYSTAL ORIENTED SUBMICRON STRUCTURES FROM BI AND Bi—Sb FILMS ON SiO2/Si SUBSTRATE
Авторы A.I. Il’in, A.V. Chernykh and C.V. Dubonos
Информация об авторах A.I. Il’in, A.V. Chernykh and C.V. Dubonos, Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences
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