Journals →
Materialy Elektronnoi Tekhniki →
2010 →
#1
Journals →
Materialy Elektronnoi Tekhniki →
2010 →
#1
Materialy Elektronnoi Tekhniki
MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
ArticleName | SIMULATION OF COALESCENCE OF PRIMARY GROWTH DEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS |
ArticleAuthors | V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, |
ArticleAuthorsData | V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, Classical Private University, Ukraine |
ArticleName | EFFECT OF REACTANT INTRODUCTION PARAMETERS ON SILICON ROD TEMPERATURE IN SIEMENS PROCESS |
ArticleAuthors | V.A. Gavrilov, P.M. Gavrilov and P.P. Turchin |
ArticleAuthorsData | V.A. Gavrilov, P.M. Gavrilov, FGUP Mining and Chemical Factory, P.P. Turchin, FGOU VPO Siberian Federal university |
MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS | |
ArticleName | EFFECT OF GROWTH CONDITIONS ON THE OPTICAL TRANSMISSION SPECTRA AND ELECTROPHYSICAL PROPERTIES OF LANTHANUM– GALLIUM SILICATE FAMILY CRYSTALS |
ArticleAuthors | O.A. Buzanov, N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel |
ArticleAuthorsData | O.A. Buzanov, OAO Fomos Materials; N.S. Kozlova, E.V. Zabelina, A.P. Kozlova and N.A. Siminel, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’) |
ArticleName | PARAMETERS OF ACTIVATION PROCESSES IN DIAMOND, SILICON AND GERMANIUM |
ArticleAuthor | M.N. Magomedov |
ArticleAuthorData | M.N. Magomedov, Institute for Geothermal Problems, Dagestan Research Center, Russian Academy of Sciences |
MODELING OF PROCESSES AND MATERIALS | |
ArticleName | CHOICE OF REACTOR CHAMBER FOR POLYCRYSTALLINE SILICON GROWTH |
ArticleAuthors | D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky |
ArticleAuthorsData | D.S. Brovin, A.A. Lovtsus and M.E. Rudinsky, Soft–Impact Ltd, Saint–Petersburg State Polytechnical University |
ArticleName | SIMULATION OF AMORPHOUS AND CRYSTALLINE DIAMOND–LIKE FILM FORMATION PROCESSES |
ArticleAuthors | B. M. Sinelnikov, V. A. Tarala |
ArticleAuthorsData | B. M. Sinelnikov, V. A. Tarala, North–Caucasus State Technical University, South Scientific Center of the Russian Academy of Sciences, laboratory of Nanochemistry and Nanotechnology |
NANOMATERIALS AND NANOTECHNOLOGY | |
ArticleName | SURFACE STRUCTURE OF SILICON/CARBON MATRIX NANOCOMPOSITES AS REVEALED BY SCANNING PROBE MICROSCOPY |
ArticleAuthors | M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin |
ArticleAuthorsData | M.D. Malinkovich, Yu.N. Parkhomenko, D.S. Polyakov and M.L. Shupegin, Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’ |
ArticleName | ESTIMATING ANALYSIS OF CONDITIONS FOR DEFECT–FREE QUANTUM DOTS FORMATION IN InxGa1–xAs/GaAs HETEROSTRUCTURES |
ArticleAuthors | R.Kh. Akchurin, N.T. Vagapova |
ArticleAuthorsData | R.Kh. Akchurin, N.T. Vagapova, Moscow State Academy of Fine Chemical Technology |
PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
ArticleName | STRUCTURAL INVESTIGATIONS OF MULTICRYSTALLINE SILICON FOR SOLAR CELLS: GRAIN SIZE MEASUREMENT PROBLEM |
ArticleAuthor | A.V. Prykhodko |
ArticleAuthorData | A.V. Prykhodko, Zaporozhye National University |
ArticleName | HEAT–SENSITIVE PROPERTIES OF PbA0,5Nb0,5O3 (A = Fe, In, Co, Mn) FERROELECTRICS |
ArticleAuthors | V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov |
ArticleAuthorsData | V.N. Tsigankov, V.V. Safonov, E.V. Savinkina and I.A. Zamilatskov, M.V. Lomonosov Moscow State Academy of Fine Chemical Technology |
ATOMIC STRUCTURES AND METHODS OF STRUCTURAL INVESTIGATIONS | |
ArticleName | EFFECT OF GROWTH CONDITIONS OF Bi2Te2,7Se0,3 SOLID SOLUTIONS ON THE ANISOTROPY OF THEIR PHYSICAL PROPERTIES |
ArticleAuthors | V.T. Bublik, A.I. Voronin, E.A. Bygovskaya, V.F. Ponomarev, N.Yu. Tabachkova and O.V. Toropova |
ArticleAuthorsData | A.I. Voronin, V.F. Ponomarev, (Kristall Research and Production Company Ltd.); N.Yu. Tabachkova, V.T. Bublik, E.A. Bygovskaya and O.V. Toropova, (Federal State Educational Institution for Higher Professional Education ‘National University of Science and Technology “MISiS”’) |
ArticleName | FABRICATION OF SINGLE–CRYSTAL ORIENTED SUBMICRON STRUCTURES FROM BI AND Bi—Sb FILMS ON SiO2/Si SUBSTRATE |
ArticleAuthors | A.I. Il’in, A.V. Chernykh and C.V. Dubonos |
ArticleAuthorsData | A.I. Il’in, A.V. Chernykh and C.V. Dubonos, Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences |